37.0-42.0 GHz GaAs MMIC

Power Amplifier

Linear Power Amplifier

Output Power Adjust

23.0 dB Small Signal Gain

+25.0 dBm P1dB Compression Point

+35.0 dBm OIP3

100% On-Wafer RF Testing

Features

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Electrical Characteristics for 37 - 40 GHz

Parameter

Frequency Range (f)

Input Return Loss (S11)

Input Return Loss (S11) with External Match

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Output Power for 1dB Compression (P1dB)

Output IM3 with Pout (scl) = 18 dBm

Output IM3 with Pout (scl) = 15 dBm

Drain Bias Voltage (Vd)

Gate Bias Voltage (Vg)

Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)

Units

GHz

dB

dB

dB

dB

dB

dB

dBm

dBc

dBc

VDC

VDC

mA

Min.

37.0

4.0

8.0

8.0

21.0

-

-

-

28.0

38.0

-

-1.0

-

Typ.

-

5.0

10.0

12.0

23.0

+/-1.0

45.0

+25.0

+35.0

40.0

+5.0

-0.3

600

Max.

42.0

-

-

-

-

-

-

-

-

-

+5.5

0.0

675

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

December 2007 - Rev 12-Dec-07

P1031-BD

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

ESD - Human Body Model

ESD - Machine Body Model

+6.0 VDC

800 mA

+0.3 VDC

+5.0 dBm

-65 to +165 deg C

Class 1A

Class M1

(1) Channel temperature affects a device’s MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life

Mimix Broadband’s four stage 37.0-42.0 GHz GaAs

MMIC power amplifier has a small signal gain of

23.0 dB with a +35.0 dBm Output Third Order

Intercept.This MMIC uses Mimix Broadband’s 0.15 µm

GaAs PHEMT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity.This device is well suited

for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

General Description