8.5-11.0 GHz GaAs MMIC

Power Amplifier

Page 4 of 5

August 2007 - Rev 03-Aug-07

P1014-BD

Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)

3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C

Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

App Note [1] Biasing -

This device has been designed with two options for biasing. Vg1 applies gate bias through an active, on-chip

bias circuit and Vg2 applies gate bias through a resistive divider. Using the first option and applying a nominal bias of Vg1=-5.0V and

Vd (1,2)=8.0V will typically yield a total drain current Id(TOTAL)=450mA. Alternatively, the drain current can be regulated by setting

Vg2=-5.0V and Vd(1,2)=8.0V which will typically yield a total drain current Id(TOTAL)=450mA. It is recommended to use active biasing

to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Also, make sure to

sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement -

Each DC pad (Vd1, 2 and Vg or Vgg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional

DC bypass capacitance (~0.01 uF) is also recommended.

MTTF

XP1014 MTTF vs. Backplate Temperature and Pulsed Duty Cycle

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

20

30

40

50

60

70

80

90

100

110

120

Backplate Temp (C)

100% DC

50% DC

30% DC

10% DC

MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.