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XP1014-BD-EV1 Datasheet(PDF) 4 Page - Mimix Broadband |
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XP1014-BD-EV1 Datasheet(HTML) 4 Page - Mimix Broadband |
4 / 5 page 8.5-11.0 GHz GaAs MMIC Power Amplifier Page 4 of 5 August 2007 - Rev 03-Aug-07 P1014-BD Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.) 3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. App Note [1] Biasing - This device has been designed with two options for biasing. Vg1 applies gate bias through an active, on-chip bias circuit and Vg2 applies gate bias through a resistive divider. Using the first option and applying a nominal bias of Vg1=-5.0V and Vd (1,2)=8.0V will typically yield a total drain current Id(TOTAL)=450mA. Alternatively, the drain current can be regulated by setting Vg2=-5.0V and Vd(1,2)=8.0V which will typically yield a total drain current Id(TOTAL)=450mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd1, 2 and Vg or Vgg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Bias Conditions: Vd1=Vd2=8.0V, Id(TOTAL)=450 mA XP1014 MTTF vs. Backplate Temperature and Pulsed Duty Cycle 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 20 30 40 50 60 70 80 90 100 110 120 Backplate Temp (C) 100% DC 50% DC 30% DC 10% DC MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate. |
Similar Part No. - XP1014-BD-EV1 |
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Similar Description - XP1014-BD-EV1 |
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