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Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)

3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C

Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

MTTF

XP1006-FA, MTTF with RF Power Applied

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

20

30

40

50

60

70

80

90

100

110

120

Backplate Temperature (C)

100% DC duty cycle

50% DC duty cycle

30% DC duty cycle

10% DC duty cycle

XP1006-FA, MTTF without RF Power

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

20

30

40

50

60

70

80

90

100

110

120

Backplate Temperature (C)

100% DC duty cycle

50% DC duty cycle

30% DC duty cycle

10% DC duty cycle

MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.

App Note [1] Biasing - This device is biased with Vd(1,2,3) = 8.0V and 4.0 A (pin 6,10). The drain current is controlled by the gate bias

with a typical value of Vg = -0.6V (pin 1). It is recommended to use active biasing to keep the currents constant as the RF power and

temperature vary; this gives the most reproducible results. The recommended power-up sequence is described below:

1. Apply -2.0 V to Vg

2. Apply +8.0 V to Vd(1,2,3)

3. Adjust Vg to achieve nominal drain current

4. Apply RF power

5. Re-adjust Vg to maintain nominal drain current.

Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low

power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT

is controlled to maintain correct drain current and thus drain voltage.

8.5-11.0 GHz GaAs Power Amplifier

Flange, 10 pin

P1006-FA

August 2007 - Rev 21-Aug-07