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XP1006-FA Datasheet(PDF) 1 Page - Mimix Broadband

Part No. XP1006-FA
Description  8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin
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Maker  MIMIX [Mimix Broadband]
Homepage  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

XP1006-FA Datasheet(HTML) 1 Page - Mimix Broadband

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8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2007 Mimix Broadband, Inc.
August 2007 - Rev 21-Aug-07
P1006-FA
Page 1 of 6
Mimix Broadband
’s three stage 8.5-11.0 GHz GaAs
packaged power amplifier has a large signal gain of
21.5 dB with a +40.5 dBm saturated output power.
This device uses Mimix Broadband
’s 0.5 m GaAs
PHEMT device model technology, and is based upon
optical gate lithography to ensure high repeatability
and uniformity. The device comes in a 10 pin, high
frequency, LCC flange package. The package has a
copper composite base material and a laminated
ceramic substrate. This device is well suited for radar
applications.
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing
Features
General Description
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)
Parameter
Frequency Range (f )
Input Return Loss (S11)1
Output Return Loss (S22)1
Large Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)1
Saturated Output Power (PSAT)
Power Added Efficiency (PAE)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
%
VDC
VDC
A
Min.
8.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
15.0
12.0
21.5
+/-0.5
60.0
+40.5
37
+8.0
-0.6
4.0
Max.
11.0
-
-
-
-
-
-
-
+9.0
-
4.5
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
4.5 A
+0.0 VDC
TBD
-65 to +165 OC
-55 to MTTF Table
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(1) Measured on-wafer pre-packaging.
1


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