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XP1006-FA Datasheet(PDF) 1 Page - Mimix Broadband |
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XP1006-FA Datasheet(HTML) 1 Page - Mimix Broadband |
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8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.) 3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. August 2007 - Rev 21-Aug-07 P1006-FA Page 1 of 6 Mimix Broadband ’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband ’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. This device is well suited for radar applications. X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing Features General Description Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC) Parameter Frequency Range (f ) Input Return Loss (S11)1 Output Return Loss (S22)1 Large Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12)1 Saturated Output Power (PSAT) Power Added Efficiency (PAE) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical) Units GHz dB dB dB dB dB dBm % VDC VDC A Min. 8.5 - - - - - - - - - - Typ. - 15.0 12.0 21.5 +/-0.5 60.0 +40.5 37 +8.0 -0.6 4.0 Max. 11.0 - - - - - - - +9.0 - 4.5 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table MTTF Table1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. (1) Measured on-wafer pre-packaging. 1 |
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