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IRFZ40 Datasheet(PDF) 3 Page - STMicroelectronics

Part # IRFZ40
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRFZ40 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =25 V
ID =29 A
RG =4.7
VGS =10 V
(see test circuit)
50
110
60
25
70
160
90
35
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID =64 A
VGS =10 V
VDD = Max Rating x 0.8
(see test circuit)
50
15
27
70
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD (
∗)
Forward On Volt age
VGS =0
ISD =50 A
2
V
trr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 50 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
150
0.45
ns
µC
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
IRFZ40/FI
3/9


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