12.0-16.0 GHz Power Amplifier

QFN, 4x4mm

32 dBm Saturated RF Power

41 dBm Output IP3 Linearity

17 dB Gain Control

On-Chip Power Detector

4x4mm Standard QFN Package

100% RF Testing

Features

Supply Voltage (Vd1,2,3)

Supply Current (Id1,2,3)

Gate Bias Voltage (Vg1,2,3)

RF Input Power

Operating Temperature (Ta)

Storage Temperature (Tstg)

Channel Temperature (Tch)

+10.0V

1500 mA

-3V

8.0W

+19 dBm

-55 to +85 ºC

-65 to +150 ºC

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(1) Operation of this device above any one of these parameters

may cause permanent damage.

(2) Channel temperature directly affects a device’s MTTF.

Channel temperature should be kept as low as possible to

maximize lifetime.

Parameter

Frequency Range (f )

Small Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

Reverse Isolation (S12)

P1dB

Psat

OIP3

Drain Bias Voltage (Vd1,2,3)

Detector Bias Voltage (Vdet,ref )

Gate Bias Voltage (Vg1,2,3)

Supply Current (Id1)

Supply Current (Id2)

Supply Current (Id3)

Units

GHz

dB

dB

dB

dB

dBm

dBm

dBm

VDC

VDC

VDC

mA

mA

mA

Min.

12.0

-2

Typ.

-

20.0

15.0

10.0

55.0

30.0

32.0

41.0

7.0

5.0

-1.0

100

200

400

Max.

16.0

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2008 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

P1043-QH

The XP1043-QH is a packaged linear power amplifier

that operates over the 12.0-16.0 GHz frequency band.

The device provides 20 dB gain and 41 dBm Output

Third Order Intercept Point (OIP3) across the band and

is offered in an industry standard, fully molded 4x4mm

QFN package. The packaged amplifier is comprised of

a three stage power amplifier with an integrated,

temperature compensated on-chip power detector.

The device includes on-chip ESD protection structures

and DC by-pass capacitors to ease the implementation

and volume assembly of the packaged part. The

device is manufactured in 0.5um GaAs PHEMT device

technology with BCB wafer coating to enhance

ruggedness and repeatability of performance.

XP1043-QH is well suited for Point-to-Point Radio,

LMDS, SATCOM and VSAT applications.

General Description

February 2008 - Rev 06-Feb-08