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XR1005-QD-EV1 Datasheet(PDF) 1 Page - Mimix Broadband |
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XR1005-QD-EV1 Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 7 page Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. August 2007 - Rev 12-Aug-07 Mimix Broadband ’s 19.0-26.0 GHz GaAs packaged receiver has a noise figure of 3.0 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband ’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. 19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm Page 1 of 7 Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 3.0 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing Features General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +4.5 VDC 180, 165 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 3 3 Electrical Characteristics (AmbientTemperatureT = 25o C) Units GHz GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC mA mA Min. 19.0 19.0 8.0 DC - - - - - - - - - -1.2 - - Typ. - - - - 12.0 8.0 +2.0 20.0 3.0 40.0 -7.0 +4.0 +4.0 -0.3 130 116 Max. 26.0 26.0 14.5 3.0 - - - - - - - +4.5 +4.5 +0.1 155 140 Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21)2 LO Input Drive (PLO) Image Rejection2 Noise Figure (NF)2 Isolation LO/RF @ LOx1/LOx2 Input Third Order Intercept (IIP3)1,2 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical) (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. R1005-QD |
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