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General Description

Parameter

Units

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

VDC

mA

Min.

20.0

6.0

4.0

12.0

-

30.0

-

-

-

-

-

Typ.

-

12.0

10.0

20.0

+/-4.0

45.0

2.0

+9.0

+16.0

+3.0

35

Max.

40.0

-

-

-

-

-

-

-

-

+5.0

50

Supply Voltage (Vd)

Supply Current (Id)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+7.0 VDC

70 mA

+12 dBm

-55 to MTTF Table

MTTF Table

Chip Device Layout

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

1

1

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Mimix Broadband’s three stage 20.0-40.0 GHz GaAs

MMIC low noise amplifier has a small signal gain of 20.0

dB with a noise figure of 2.0 dB across the band. This

MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT

device model technology, and is based upon electron

beam lithography to ensure high repeatability and

uniformity. The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process. This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

Absolute Maximum Ratings

Frequency Range (f )

Input Return Loss (S11) @ 22.0-36.0 GHz

Output Return Loss (S22) @ 22.0-36.0 GHz

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Noise Figure (NF) @ 24.0-40.0 GHz

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd)

Supply Current (Id) (Vd=3.0V or 5.0V)

(2) Unless otherwise indicated min/max over 20.0-40.0 GHz and biased at Vd=5V, Id=50mA.

2

2

2

2

2

20.0-40.0 GHz GaAs MMIC

Low Noise Amplifier

Features

Self Bias Architecture

Small Size

3.0 or 5.0 V Operation

20.0 dB Small Signal Gain

2.0 dB Noise Figure

+9.0 dBm P1dB Compression Point

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883

Method 2010

July 2007 - Rev 24-Jul-07

L1000-BD