![]() |
Electronic Components Datasheet Search |
|
CMM3566-LC Datasheet(PDF) 1 Page - Mimix Broadband |
|
CMM3566-LC Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 4 page ![]() The CMM3566-LC is a three stage amplifier that requires a positive and a negative supply voltages for proper operation. It is essential when turning on the device that the negative supply be applied before the positive supply. When turning the device off, the positive supply should be removed before the negative supply is removed. The CMM3566-LC can be operated over a range of supply voltages and bias currents. It is important that the maximum power dissipation specification for the package be observed at all times and that the maximum voltage across the device not be exceeded. Circuit Design Considerations Biasing Three negative voltages are needed to set the bias current of the 3-stage GaAs FET power amplifier. The first stage bias is controlled via Vg1. The second stage bias is controlled via Vg2. The output stage is controlled via Vg3. The recommended divider networks for each gate bias shown in the schematic. The positive supply voltage is applied to pins 5, 6, 7 and 8. The negative volt- age supplies control the quiescent current of the device. The quies- cent current needs to be set at the level specified in order to get the guaranteed RF performances. Negative bias voltages can also be used to control the gain, the output power and the operating current during operation of the device. Matching Circuits Output matching circuit is required to achieve the output power and gain guaranteed. Mimix’s recommenda- tion for the topology of the matching circuit is shown in the schematic diagram of the test circuit in this data sheet. In providing both the negative and positive bias voltages, it is important to provide adequate de-coupling between the RF signal and the DC voltages. Inadequate de-coupling could result in low output power, low gain or oscillation. Mimix recommends the bias circuits shown in the evaluation circuit . – Continued on Page 2 – 3.4 to 3.5 GHz, 7.0V, +24 dBm W-CDMA Power Amplifier Page 1 of 4 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. CMM3566-LC August 2007 - Rev 02-Aug-07 Functional Block Diagram Ground Tab Vg3 1 RF IN 4 Vg2 2 Vg1 3 7 RF OUT/+Vd3 8 RF OUT/+Vd3 5 Vd1 6 Vd2 Ground Tab Features 7.0V Bias Voltage +24 dBm Linear Output Power (W-CDMA) 30 dB Gain at Operating Output Tested Under Digital Modulation (W-CDMA) Leadless Chip Carrier (LCC) Package Wireless Local Loop Subscriber Units Wireless Local Loop Base Stations Applications The CMM3566-LC is a 7.0V, +24 dBm, linear power amplifier intended for use in PCS handsets and wireless local loop subscriber units and base stations. The amplifier is biased to meet the requirements of linear modulation systems of W-CDMA. The CMM3566-LC is packaged in a low-cost, space efficient, power package that provides excellent electrical stability and low thermal resistance. The part requires minimal external circuitry for bias and matching to reduce space and cost. General Description Absolute Maximum Ratings Application Information Recommended Operating Conditions s t i n U p y T r e t e m a r a P s t i n U p y T r e t e m a r a P Drain Voltage (+Vd) 7.0 Volts Operating Temperature (PC Board) -40 to +70 °C Parameter Rating Parameter Rating Parameter Rating Drain Voltage (+Vd) +8 V* Power Dissipation 5 W Operating Temperature -30°C to +90°C Drain Current (Id) 1.0 A Thermal Resistance 20°C/W Channel Temperature 150°C RF Input Power 0 dBm* Storage Temperature -65°C to +150°C Soldering Temperature 240°C for 5 Sec. DC Gate Voltage (-Vg) -4.0 V* BVGD 18 V * Max (+V d ) and (-Vg ) under linear operation. Max potential difference across the device at 1dB gain compression point (2Vd +|-Vg1) not to exceed the minimum breakdown voltage (BV GD) of +18V. |