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CHV2720-QJ Datasheet(PDF) 1 Page - Mimix Broadband

Part No. CHV2720-QJ
Description  2.3-2.7 GHz InGaP HBT 8W Linear Power Amplifier
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Maker  MIMIX [Mimix Broadband]
Homepage  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

CHV2720-QJ Datasheet(HTML) 1 Page - Mimix Broadband

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CHV2720-QJ
2.3-2.7 GHz InGaP HBT
8W Linear Power Amplifier
February 2008 - Rev 08-Feb-08
P1dB, 8W
Power Gain, 12 dB
Efficiency, 25% @ 1W
Positive Voltage Supply, +5V to +12V
Integrated Active Bias Circuit
Control Voltage Allows Different Current Settings
Input Fully Matched Internally
Output Pre-Matched Internally
Thermally Efficient for Higher MTTF
RoHS Compliant 6X6mm QFN
Ideal for WiMAX and WiBRO Applications (802.16)
Features
General Description
The CHV2720-QJ is a high linearity single stage class AB
Heterojunction Bipolar Transistor (HBT) power amplifier
capable of 12 dB of gain, 8 Watt of power at 1 dB
compression and is housed in a 6X6mm QFN package. The
CHV2720-QJ provides less than 2.5% EVM at 31dBm output
power with 802.16 OFDM signal and peak to average
power ratio of 9 dB. The input of the device is fully matched
and the output is internally pre matched to 6 ohm
facilitating a simplified output matching approach. This
product operates off a single supply voltage between 5V
and 12V and includes an internal bias circuitry to enable
exact setting of quiescent current using an external control
voltage. The device is ideal as a final or driver stage for
WiMAX equipment in the 2.3 -2.7 GHz bands.
Absolute Maximum Ratings
Voltage Supply (Vcc)
Current (Icc)
Dissipated Power (Pdiss)
Input Power (Pin)
Storage Temperature (Tstg)
Channel Temperature (Tch)
Thermal Resistance (Rth)
Operating Backside Temperature (Tb)
4.5 (min) / 12 V (max)
2000 mA
18W
22 dBm
-60 to +150 ºC
175 ºC
5 ºC/W
-40 ºC to (see note 1)
Operation outside any of these limits can cause permanent damage.
(1) Caclulate maximum operating temperature Tmax using the
following formula: Tmax=175-(Pdiss [W] x 5) [C].
Electrical Characteristics (AmbientTemperatureT=25 oC,Vcc=12V)1
Description
Parameter
Units
Min.
Typ.
Max.
Operating Frequency
f
GHz
2.3
2.5
2.7
Quiescent Current (2)
Icq
mA
-
160
-
Power Gain @ Pout = 31dBm
Gps
dB
-12
-
Efficiency @ 31dBm
Eff
%
-25
-
Output Power @ EVM = 2.5% (3)
Pout
dBm
-
31.5
-
Adjacent Channel Power Ratio @Pout = 31dBm (4)
ACPR
dBc
-
-40
-
Power @ 1dB Compression Point
P1dB
dBm
-39
-
Output Third order intercept Point @ 31dBm/tone (5)
OIP3
dBm
-
51
-
Input Reflection Coefficient
S11
dB
--12
-
Control Voltage
Vctrl
V
-5
-
Noise Figure
NF
dB
-9
-
(1) Data measrued in a Mimix matched connectorized fixture.
(2) Quiescent current depends on Vcc
(3) Using an 802.16d OFDM signal format with PAR = 9dB
(4) Using 3 GPP WCDMA signal, PAR = 9.17dB
(5) 100KHz spacing


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