FDP52N20 / FDPF52N20T Rev. A

www.fairchildsemi.com

2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP52N20

FDP52N20

TO-220

-

-

50

FDPF52N20T

FDPF52N20T

TO-220F

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

200

-

-

V

∆BV

DSS

/

∆T

J

Breakdown Voltage Temperature

Coefficient

0.2

-

Zero Gate Voltage Drain Current

-

-

1

µA

-

10

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-

0.041

0.049

Ω

Forward Transconductance

(Note 4)

-35

-

S

Input Capacitance

f = 1MHz

-

2230

2900

pF

Output Capacitance

-

540

700

pF

Reverse Transfer Capacitance

-

66

100

pF

Total Gate Charge at 10V

(Note 4, 5)

-49

63

nC

Gate to Source Gate Charge

-

19

-

nC

Gate to Drain “Miller” Charge

-

24

-

nC

Turn-On Delay Time

(Note 4, 5)

-

53

115

ns

Turn-On Rise Time

-

175

359

ns

Turn-Off Delay Time

-

48

107

ns

Turn-Off Fall Time

-

29

68

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

52

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

204

A

Drain to Source Diode Forward Voltage

-

-

1.5

V

Reverse Recovery Time

(Note 4)

-

162

-

ns

Reverse Recovery Charge

-

1.3

-

µC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics