IRK.F200.. Series

8

Bulletin I27099 rev. C 03/01

www.irf.com

Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 H z

400

10 00

500 0

15 0

2500

Pu lse Base w idth ( s)

Snub b e r c irc uit

R = 10 ohm s

C = 0.47

F

V

= 80% V

IRK.F 200.. Se rie s

Tra p ezoid a l p ulse

T = 60 C d i/d t 50A / s

1E4

tp

DR M

C

s

s

D

E1

1E2

1E3

1E4

50 H z

40 0

1000

5000

150

2500

Pu lse Base w idth ( s)

IRK .F200.. Se ries

Tra pezo id a l p ulse

T = 60 C di/d t 100A / s

Snub b e r c irc uit

R = 10 ohm s

C = 0.47 F

V

= 80% V

1E1

tp

DR M

C

s

s

D

1E1

1E2

1E3

1E4

1E11E2

1E31E4

10 jou les per p u lse

5

2.5

1

0.5

0.2 5

0.1

0.05

Pu lse Base w id th ( s)

IRK .F2 00.. Se ries

Sinusoid a l p uls e

tp

1E4

E1

1E2

1E3

1E4

10 jou les per pulse

5

2.5

1

0.5

0.25

0.1

0.05

Pu lse Base w idth ( s)

IRK .F 200.. Se ries

Tra p e zoid a l p ulse

di/d t 50A / s

tp

1E1

0.1

1

10

100

0.01

0.1

1

10

100

VG D

IG D

(b )

(a )

(2)

(3 )

In sta n ta n e o u s G ate C u rre nt (A )

a ) R e c o m m e n d e d lo a d lin e fo r

b ) R e c o m m e nd e d lo a d lin e fo r

R e ctan gu la r ga te pu lse

ra te d di/d t : 1 0V, 10 o h m s

< = 30% ra te d d i/d t : 1 0V , 20 o h m s

IRK .F200.. Se ries

F requen c y Lim ite d by P G (AV )

(1) PG M = 8W , tp = 25m s

(2) PG M = 20W , tp = 1m s

(3) PG M = 40W , tp = 5m s

(4) PG M = 80W , tp = 2.5m s

(1)

(4)