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PBHV8115T Datasheet(PDF) 3 Page - NXP Semiconductors |
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PBHV8115T Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page PBHV8115T_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 4 February 2008 3 of 12 NXP Semiconductors PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 400 V VCEO collector-emitter voltage open base - 150 V VEBO emitter-base voltage open collector - 6 V IC collector current - 1 A ICM peak collector current single pulse; tp ≤ 1ms -2 A IBM peak base current single pulse; tp ≤ 1ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C FR4 PCB, standard footprint Fig 1. Power derating curve SOT23 (TO-236AB) Tamb (°C) −75 175 125 25 75 −25 006aab150 200 100 300 400 Ptot (mW) 0 |
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