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PESD5V0S4UF Datasheet(PDF) 2 Page - NXP Semiconductors |
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PESD5V0S4UF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page PESD3V3S4UF_PESD5V0S4UF_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 17 January 2008 2 of 13 NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 common anode 6 cathode (diode 4) bottom view 3 2 1 4 5 6 006aaa156 6 1 5 2 4 3 Table 3. Ordering information Type number Package Name Description Version PESD3V3S4UF XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm SOT886 PESD5V0S4UF Table 4. Marking codes Type number Marking code[1] PESD3V3S4UF A3 PESD5V0S4UF A4 Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode PPP peak pulse power tp = 8/20 µs [1][2] - 110 W IPP peak pulse current tp = 8/20 µs [1][2] -10 A |
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