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D44H8 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. D44H8
Description  NPN SILICON POWER TRANSISTORS
Download  5 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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D44H8 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICBO
Collect or Cut-off
Current (IE =0)
VCB =rated VCEO
10
µA
IEBO
Emitt er Cut-off Current
(IC =0)
VEB =5V
100
µA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
IC =100 mA
for D44H8
for D44H11
60
80
V
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =8 A
IB =0.4 A
1
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =8 A
IB = 0.8 A
1.5
V
hFE
DC Current G ain
IC =2 A
VCE =1 V
IC =4 A
VCE =1 V
60
40
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
Safe Operating Area
Derating Curves
D44H8/D44H11
2/5


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