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BYW51-200 Datasheet(PDF) 5 Page - STMicroelectronics |
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BYW51-200 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 9 page Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW51/F/G/FP/R-200 5/9 10 20 50 100 200 500 1 10 50 dIF/dt(A/µs) IRM(A) IF=IF(av) 90% confidence Tj=125°C Fig. 9: Peak reverse recovery current versus dIF/dt (per diode). 0 25 50 75 100 125 150 0.25 0.50 0.75 1.00 1.25 Tj(°C) Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C] IRM Qrr Fig. 10: Dynamic parameters versus junction temperature. 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (D 2PAK) . |
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