tm

©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGH80N60FD Rev. A

December 2007

Absolute Maximum Ratings

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

Ratings

Units

Collector-Emitter Voltage

600

V

Gate-Emitter Voltage

± 20

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

160

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

°C

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case

--

0.43

°C/W

Thermal Resistance, Junction-to-Case

1.5

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W

G

C

E

E

C

G

COLLECTOR

(FLANGE)

FGH80N60FD

600V, 80A Field Stop IGBT

Features

• High current capability

• High input impedance

• Fast switching

•RoHS complaint

Applications

• Induction Heating Application

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new ses-

ries of Field Stop IGBTs offer the optimum performance for

Induction Heating applications where low conduction and

switching losses are essential.