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BYV54V Datasheet(PDF) 4 Page - STMicroelectronics |
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BYV54V Datasheet(HTML) 4 Page - STMicroelectronics |
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BYV54V / BYV541V 4/5 1 1 0 100 240 260 280 300 320 340 360 380 400 420 20 0 VR(V) F=1Mhz Tj=25 C o C(pF) Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 11 0 1 00 0 10 20 30 40 50 60 70 80 90 100 110 120 QRR(nC) 90%CONFIDENCE IF=IF(av) Tj=100 C O Tj=25 C O dIF/dt(A/us) Fig.8 : Recovery charges versus dIF/dt. Tj( C) QRR;IRM[Tj]/QRR;IRM[Tj=125 C] 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 IRM QRR o o Fig.10 : Dynamic parameters versus junction temperature. 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 20 IRM(A) Tj=25 C O dIF/dt(A/us) 90%CONFIDENCE Tj=100 C O IF=IF(av) Fig.9 : Peak reverse current versus dIF/dt. |
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