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BYV54V Datasheet(PDF) 2 Page - STMicroelectronics |
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BYV54V Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page BYV54V / BYV541V 2/5 Symbol Test Conditions Min. Typ. Max. Unit IR * Tj =25 °CVR =VRRM 50 µA Tj = 100 °C 5mA VF** Tj = 125 °CIF =50 A 0.85 V Tj = 125 °CIF = 100 A 1.00 Tj =25 °CIF = 100 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr Tj =25 °CIF = 0.5A IR =1A Irr = 0.25A 40 ns IF =1A VR = 30V dIF/dt = -50A/ µs60 tfr Tj =25°CIF =1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj =25 °CIF = 1A tr = 5 ns 1.5 V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 1.2 °C/W Total 0.85 Rth (c) Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE |
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