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BYT230Y-400 Datasheet(PDF) 4 Page - STMicroelectronics |
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BYT230Y-400 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 5 page 10 20 50 100 200 500 1 10 50 IRM(A) dIF/dt(A/ µs) IF=IF(av) 90% confidence Tj=100 °C Fig. 9: Recovery current versus dIF/dt (per diode). 1 10 100 200 10 20 50 100 VR(V) C(pF) F=1MHz Tj=25 °C Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). 10 20 50 100 200 500 10 100 1000 Qrr(nC) IF=IF(av) 90% confidence Tj=100 °C dIF/dt(A/ µs) Fig. 8: Recoverycharges versus dIF/dt (per diode). 0 100 200 300 400 500 0 5 10 15 20 25 30 VFP(V) IF=IF(av) 90% confidence Tj=100 °C dIF/dt(A/ µs) Fig. 10: Transient peak forward versus dIF/dt (per diode). 0 100 200 300 400 500 0.00 0.25 0.50 0.75 1.00 1.25 1.50 tfr( µs) dIF/dt(A/ µs) IF=IF(av) 90% confidence Tj=100 °C Fig. 11: Forward recovery time versus dIF/dt (per diode). 0 25 50 75 100 125 150 0.25 0.50 0.75 1.00 1.25 1.50 Qrr;IRM[Tj] / Qrr;IRM[Tj=100 °C] IRM Qrr Tj( °C) Fig. 12: Dynamic parameters versus junction temperature. BYT230Y-400 4/5 |
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