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BYT08P-400 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. BYT08P-400
Description  FAST RECOVERY RECTIFIER DIODES
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BYT08P-400 Datasheet(HTML) 4 Page - STMicroelectronics

  BYT08P-400 Datasheet HTML 1Page - STMicroelectronics BYT08P-400 Datasheet HTML 2Page - STMicroelectronics BYT08P-400 Datasheet HTML 3Page - STMicroelectronics BYT08P-400 Datasheet HTML 4Page - STMicroelectronics BYT08P-400 Datasheet HTML 5Page - STMicroelectronics BYT08P-400 Datasheet HTML 6Page - STMicroelectronics BYT08P-400 Datasheet HTML 7Page - STMicroelectronics  
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1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
δ=tp/T
tp
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Typical values
Tj=100°C
Tj=25°C
Tj=100°C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1
10
100
200
10
12
14
16
18
20
22
24
26
28
30
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10
20
50
100
200
0
50
100
150
200
250
dIF/dt(A/µs)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=100°C
Fig. 8: Recovery charges versus dIF/dt (per diode).
10
20
50
100
200
0
2
4
6
8
10
IRM(A)
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
Fig. 9: Recovery current versus dIF/dt (per diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
VFP(V)
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode)
BYT08P-400 / BYT08PI-400
4/7


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