STTH16R04CG-TR datasheet(4/10 Pages) STMICROELECTRONICS

Part #	STTH16R04CG-TR

Description	Ultrafast recovery diode

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

STTH16R04C

4/10

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

0

1

2

3

4

5

6

7

8

9

10

11

12

13

01

234

5

6

789

10

11

P(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

T

δ=tp/T

tp

IF(AV)(A)

0

20

40

60

80

100

120

140

160

180

200

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

I

FM(A)

T

J=150°C

(Maximum values)

T

J=150°C

(Maximum values)

T

J=150°C

(Typical values)

T

J=150°C

(Typical values)

T

J=25°C

(Maximum values)

T

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case

versus pulse duration TO-220FPAB

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Zth

(j-c)/Rth(j-c)

Single pulse

TO-220AB/D²PAK

tp(s)

0.0

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth

(j-c)/Rth(j-c)

Single pulse

TO-220FPAB

tp(s)

Figure 5.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 6.

Reverse recovery time versus

dIF/dt (typical values)

0

1

2

3

4

5

6

7

8

9

10

11

12

10

100

1000

I

RM(A)

I

F= 8 A

V

R=320 V

T

j=125 °C

T

j=25 °C

dIF/dt(A/µs)

0

20

40

60

80

100

120

140

10

100

1000

t

RR(ns)

I

F= 8 A

V

R=320 V

T

j=125 °C

T

j=25 °C

dIF/dt(A/µs)

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STTH16R04CG-TR Datasheet(PDF) 4 Page - STMicroelectronics

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