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BUV26 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUV26 Datasheet(HTML) 1 Page - STMicroelectronics |
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BUV26 MEDIUM POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s FAST SWITCHING SPEED s LOW COLLECTOR EMITTER SATURATION APPLICATIONS s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) 180 V VCEO Collector-Emitter Voltage (IB = 0) 90 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Emitter Current 14 A ICM Collector Peak Current (tp <10ms) 25 A IB Base Current 4 A IBM Base Peak Current (tp <10ms) 6 A Ptot Total Dissipation at Tc < 25 oC85 W Ptot Total Dissipation at Tc < 60 o C65 W Tstg Storage Temperature -65 to +175 oC Tj Max. Operating Junction Temperature 175 oC 1 2 3 TO-220 1/4 |
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