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BULD118D-1 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BULD118D-1
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Download  7 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BULD118D-1 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =700 V
VCE =700 V
Tj =125
o C
100
500
µA
µA
VEBO
Emitt er-Base Voltage
IE =10 mA
9
V
VCEO(sus)
Collect or-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
400
V
ICEO
Collect or-Emitter
Leakage Current
VCE =400 V
250
µA
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =0.5 A
IB =0.1 A
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
0.5
1
1.5
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =0.5 A
IB =0.1 A
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
1.0
1.2
1.3
V
V
V
hFE
DC Current G ain
IC =10 mA
VCE =5 V
IC =0.5 A
VCE =5 V
IC =2 A
VCE =5 V
10
10
8
50
tr
tf
ts
RESI STIVE LO AD
Rise Time
Fall T ime
St orage Time
group A
group B
VCC = 125 V
IC =2 A
IB1 =0.4 A
IB2 =-0.2 A
tp =30
µs
1. 4
2
0.7
0.3
0.5
2.1
2.75
µs
µs
µs
µs
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =1 A
IB1 =0.2 A
VBE = -5V
L= 50 mH
Vcla mp = 300 V
0.8
0. 10
µs
µs
VF
Diode Forward Volt age IC = 1 A
2.5
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Note : Product is pre-selected in storage time (GROUP A and GROUP B). SGS-THOMSON reserves the right to ship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
BULD118D-1
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