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BUL416 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL416
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Download  6 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUL416 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.14
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =1600 V
VCE =1600 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collect or Cut-off
Current (IB =0)
VCE =800 V
250
µA
VCEO(sus)
Collect or-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
800
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =2 A
IB =0.4 A
IC =4 A
IB =1.33 A
1.5
3
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =2 A
IB =0.4 A
IC =4 A
IB =1.33 A
1.2
1.5
V
V
hFE
DC Current G ain
IC =0. 7 A
VCE =5 V
IC =10 mA
VCE =5 V
12
10
40
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =3 A
IB1 =1 A
VBE(off) =-5 V
RBB =0
VCL = 200 V
L = 200
µH
2.3
650
µs
ns
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =3 A
IB1 =1 A
VBE(off) =-5 V
RBB =0
VCL = 200 V
L = 200
µH
Tj = 100
oC
3
680
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL416
2/6


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