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BUL39D Datasheet(PDF) 2 Page - STMicroelectronics |
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BUL39D Datasheet(HTML) 2 Page - STMicroelectronics |
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THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 1.78 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = rated VCES VCE = rated VCES Tj = 125 oC 100 500 µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 9 V 100 µA VCEO(sus) Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA L = 25 mH 450 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IB = 0.2 A IC = 2.5 A IB = 0.5 A 0.13 0.5 1.1 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IB = 0.2 A IC = 2.5 A IB = 0.5 A 1.1 1.3 V V hFE ∗ DC Current Gain IC = 5 A VCE = 10 V IC = 10 mA VCE = 5 V 4 10 VCEW Maximum Collector Emitter Voltage Without Snubber IC = 6 A RBB = 0 Ω VBB = -2.5 V L = 50 µH tp = 10 µs 450 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2.5 A IBon = 0.5 A VBE(off) = -5 V RBB = 0 Ω VCL = 300 V L = 1 mH 0.7 50 1.5 100 µs ns Vf Diode Forward Voltage IC = 2 A 1.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BUL39D 2/6 |
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