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BUL38D Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUL38D
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUL38D Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junct ion-Case
Max
Thermal Resistance Junct ion-Ambient
Max
1.56
62. 5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collector Cut -of f
Current (VBE =0)
VCE =800 V
VCE =800 V
Tj =125
oC
100
500
µA
µA
ICEO
Collector Cut -of f
Current (IB =0)
VCE = 450 V
250
µA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC = 100 mA
L = 25 mH
450
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
IC =3 A
IB =0.75 A
0.5
0.7
1.1
V
V
V
VBE(s at)
∗ Base-Emitter
Saturation Voltage
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
1.1
1.2
V
V
hFE
DC Current Gain
IC =10 mA
VCE =5 V
IC =0.5 A
VCE =5 V
IC =2 A
VCE =5 V
Group A
Group B
10
13
22
60
23
32
ts
tf
RESI STIVE LO AD
St orage Time
Fall Time
IC =2. 5 A
VCC =150 V
IB1 =-IB2 =0.5 A
tp =30
µs
1. 0
2.2
0.8
µs
µs
ts
tf
INDUCTIVE LO AD
St orage Time
Fall Time
IC =2 A
IB1 =0.4 A
VBE(off) =-5 V
RBB =0
VCL = 250 V
L = 200
µH
1
55
1.8
100
µs
ns
ts
tf
INDUCTIVE LO AD
St orage Time
Fall Time
IC =2 A
IB1 =0. 4 A
VBE(off) =-5 V
RBB =0
VCL = 250 V
L = 200
µH
Tj =125
oC
1.3
100
µs
ns
Vf
Diode F orward Voltage
IC =2 A
1.5
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
BUL38D
2/6


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