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BUH615D Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUH615D
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Download  4 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUH615D Datasheet(HTML) 2 Page - STMicroelectronics

  BUH615D Datasheet HTML 1Page - STMicroelectronics BUH615D Datasheet HTML 2Page - STMicroelectronics BUH615D Datasheet HTML 3Page - STMicroelectronics BUH615D Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
2.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
Tj = 125
oC
0.2
2
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
300
mA
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 6 A
IB = 2.5 A
1.5
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 6 A
IB = 2.5 A
1.3
V
hFE
DC Current Gain
IC = 6 A
VCE = 5 V
4
9
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 400 V
IC = 6 A
IB1 = 1.5 A
IB2 = -3 A
2.7
190
3.9
280
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 6 A
f = 15625 Hz
IB1 = 1.25 A
IB2 = -3 A
Vceflyback = 1050 sin
π
10
10
6
t
V
2.3
350
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 6 A
f = 31250 Hz
IB1 = 1.5 A
IB2 = -3 A
Vceflyback = 1200 sin
π
5
10
6
t
V
2.3
200
µs
ns
Vf
Diode Forward Voltage
IF = 5 A
2
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
BUH615D
2/4


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