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BUH515D Datasheet(PDF) 4 Page - STMicroelectronics

Part No. BUH515D
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUH515D Datasheet(HTML) 4 Page - STMicroelectronics

   
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Switching Time Resistive Load
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100
oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes
power
losses,
fall
time
tf
and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at 16 KHz
frequencies for
choosing the optimum negative drive. The test
circuit is illustrated in fig. 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2 =
1
2
C
(VCEfly)2
ω= 2 πf =
1
√
L C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
BUH515D
4/7


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