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BUH515 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BUH515
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Download  7 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BUH515 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collector Cut -of f
Current (VBE =0)
VCE = 1500 V
VCE = 1500 V
Tj =125
oC
0.2
2
mA
mA
IEBO
Emitt er Cut -of f Current
(IC =0)
VEB =5 V
100
µA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC = 100 mA
700
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
10
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC =5 A
IB =1.25 A
1.5
V
VBE(s at)
∗ Base-Emitter
Saturation Voltage
IC =5 A
IB =1.25 A
1.3
V
hFE
DC Current Gain
IC =5 A
VCE =5 V
IC =5 A
VCE =5 V
Tj =100
oC
6
4
12
ts
tf
RESI STIVE LO AD
St orage Time
Fall Time
VCC =400 V
IC =5 A
IB1 =1.25 A
IB2 = 2.5 A
2.7
190
3.9
280
µs
ns
ts
tf
INDUCTIVE LO AD
St orage Time
Fall Time
IC = 5 A
f = 15625 Hz
IB1 =1.25 A
IB2 =-1.5 A
Vc eflybac k =1050 sin
π
5
10
6
tV
2.3
350
µs
ns
ts
tf
INDUCTIVE LO AD
St orage Time
Fall Time
IC = 5A
f = 31250 Hz
IB1 =1.25 A
IB2 =-1.5 A
Vc eflybac k =1200 sin
π
5
10
6
tV
2.3
200
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUH515
2/7


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