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BTA24-600B Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BTA24-600B
Description  25A TRIACS
Download  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTA24-600B Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
BTA24, BTB24, BTA25, BTA26 and T25 series
2/12
1
Characteristics
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
D2PAK /
TO-220AB
Tc = 100° C
25
A
RD91 /
TOP3 Ins.
Tc = 90° C
TO-220AB Ins.
Tc = 75° C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
F = 50 Hz
t = 20 ms
250
A
F = 60 Hz
t = 16.7 ms
260
I²tI²t Value for fusing
tp = 10 ms
340
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125° C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25° C
VDSM/VRSM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125° C
4
A
PG(AV)
Average gate power dissipation
Tj = 125° C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
Table 2.
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless™ and
Logic Level (3 quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
BTA/BTB
Unit
T2535
CW
BW
IGT
(1)
VD = 12 V RL = 33 Ω
I - II - III
MAX.
35
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
I - II - III
MIN.
0.2
V
IH
(2)
IT = 500 mA
MAX.
50
50
75
mA
IL
IG = 1.2 IGT
I - III
MAX.
70
70
80
mA
II
80
80
100
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125° C
MIN.
500
500
1000
V/µs
(dI/dt)c (2)
Without snubber
Tj = 125° C
MIN.
131322
A/ms
1.
minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1.


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