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BTA10 Datasheet(PDF) 3 Page - STMicroelectronics |
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BTA10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 4 page 0 1 2 3456789 10 0 2 4 6 8 10 12 14 180 O =180 o = 120 o =90 o =60 o =30 o T(RMS) I (A) P(W) Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) 0 204060 80 100 120 140 0 2 4 6 8 10 12 14 -85 -95 -105 -115 -125 P(W) Rth = 0 C/W 2.5 C/W 5C/W 10 C/W o o o o Tamb ( C) o Tcase ( C) o Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2 4 6 8 10 12 = 180 o Tcase( C) o I (A) T(RMS) Fig.3 : RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 0.01 0.1 1 Zth/Rth Zt h( j-c ) Zt h( j-a ) tp (s ) Fig.4 : Relative variation of thermal impedance versus pulse duration. Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non repetitive surge peak on-state current versus number of cycles. BTA10 GP 3/4 |
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