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IRF7822PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF7822PBF
Description  HEXFET® Power MOSFET for DC-DC Converters
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7822PBF Datasheet(HTML) 1 Page - International Rectifier

   
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Parameter
Symbol
IRF7822
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±12
Continuous Drain or Source
T
A = 25°C
I
D
18
Current (V
GS ≥ 4.5V)
T
A = 70°C
13
A
Pulsed Drain Current

I
DM
150
Power Dissipation
T
A = 25°C
P
D
3.1
W
T
A = 70°C
3.0
Junction & Storage Temperature Range
T
J, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
I
S
3.8
A
Pulsed Source Current

I
SM
150
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
ƒ
R
θJA
40
°C/W
Maximum Junction-to-Lead
R
θJL
20
°C/W
Thermal Resistance
IRF7822PbF
9/30/04
IRF7822
R
DS(on)
5.0m
Q
G
44nC
Q
sw
12nC
Q
oss
27nC
DEVICE CHARACTERISTICS
…
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8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
SO-8
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low R
DS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
www.irf.com
1
PD - 95024


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