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LP3999ITLX-2.4NOPB Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LP3999ITLX-2.4NOPB Datasheet(HTML) 7 Page - National Semiconductor (TI) |
7 / 15 page Electrical Characteristics (Continued) Unless otherwise noted, V EN = 1.5, VIN =VOUT(NOM) + 1.0V, CIN = 1 µF, IOUT = 1 mA, COUT = 1 µF, cBP = 0.01 µF. Typical values and limits appearing in normal type apply for T J = 25˚C. Limits appearing in boldface type apply over the full tempera- ture range for operation, −40 to +125˚C. (Note 13) Symbol Parameter Conditions Typical Limit Units Min Max DEVICE OUTPUT: 2.5 ≤ V OUT ≤ 3.3V ∆V OUT Output Voltage Tolerance I OUT = 1 mA -2 2 %of V OUT(NOM) −3 3 Line Regulation Error V IN =(VOUT(NOM)+1.0V) to 6.0V, I OUT =1 mA −0.1 0.1 %/V micro SMD Load Regulation Error I OUT = 1 mA to 150 mA 0.0004 0.002 %/mA LLP Load Regulation Error I OUT = 1 mA to 150 mA 0.003 %/mA Dropout Voltage I OUT = 1 mA 0.4 2 mV I OUT = 150 mA 60 100 PSRR Power Supply Rejection Ratio (Note 11) f = 1 kHz, I OUT = 1 mA 60 dB f = 10 kHz, I OUT = 1 mA 50 FULL V OUT RANGE I LOAD Load Current (Notes 10, 11) 0 µA I Q Quiescent Current V EN = 1.5V, IOUT = 0 mA 85 150 µA V EN = 1.5V, IOUT = 150 mA 140 200 V EN = 0.4V 0.003 1.5 I SC Short Circuit Current Limit 450 mA E N Output Noise Voltage ((Note 11)) BW = 10 Hz to 100 kHz, V IN = 4.2V, No Load 10 µVrms BW = 10 Hz to 100 kHz, V IN = 4.2V, 1mA Load 30 T SHUTDOWN Thermal Shutdown Temperature 160 ˚C Hysteresis 20 ENABLE CONTROL CHARACTERISTICS I EN Maximum Input Current at V EN Input V EN = 0.0V and VIN = 6.0V 0.001 µA V IL Low Input Threshold 0.4 V V IH High Input Threshold 0.9 V TIMING CHARACTERISTICS T ON Turn On Time (Note 11) To 95% Level (Note 12) 140 µs Note 3: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 4: All voltages are with respect to the potential at the GND pin. Note 5: For further information on these packages please refer to the following application notes; AN-1112 Micro SMD Package Wafer Level Chip Scale Package, AN-1187. Leadless Leadframe Package. Note 6: Internal Thermal shutdown circuitry protects the device from permanent damage. Note 7: In applications where high power dissipation and/or poor thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op)), the maximum power dissipation (PD(max)), and the junction to ambient thermal resistance in the application ( θJA). This relationship is given by :- T A(max) =TJ(max-op) −(PD(max) x θ JA) Note 8: Junction to ambient thermal resistance is highly dependant on the application and board layout. In applications where high thermal dissipation is possible, special care must be paid to thermal issues in the board design. Note 9: The human body is 100 pF discharge through 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin. Note 10: The device maintains the regulated output voltage without load. Note 11: This electrical specification is guaranteed by design. Note 12: Time from VEN = 0.9V to VOUT = 95% (VOUT(NOM)) www.national.com 7 |
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