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BD241A Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BD241A
Description  COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BD241A Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.13
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = rated VCEO
0.2
mA
ICEO
Collector Cut-off
Current (IB = 0)
for BD241A/BD242A
VCE = 30 V
for BD241B/BD242B
VCE = 60 V
for BD241C/BD242C
VCE = 60 V
0.3
0.3
0.3
mA
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
V
V
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 0.6 A
1.2
V
VBE
Base-Emitter Voltage
IC = 3 A
VCE = 4 V
1.8
V
hFE
DC Current Gain
IC = 1 A
VCE = 4 V
IC = 3 A
VCE = 4 V
25
10
hfe
Small Signal Current
Gain
IC = 0.5 A
VCE = 10 V
f = 1MHz
IC = 0.5 A
VCE = 10 V
f = 1KHz
3
20
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
BD241A/B/C/BD242A/B/C
2/4


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