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BCW66 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BCW66
Description  SMALL SIGNAL NPN TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BCW66 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-amb
Rth j-SR
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Substrat e
Max
375
278
oC/W
oC/W
• Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =Rated VCES
VCE =Rated VCES
Tamb = 150
oC
20
20
nA
µA
IEBO
Collect or Cut-off
Current (IE =0)
VEB =4 V
20
nA
V( BR)CEO
∗ Collector-Emitter
Breakdown Volt age
(IB =0)
IC =10 mA
45
V
V
V(BR)CES
∗ Collector-Emitter
Breakdown Volt age
(VEB =0)
IC =10
µA75
V
V
V(BR)EBO
Emitt er-Base
Breakdown Volt age
(IC =0)
IC =10
µA5
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =100 mA
IB =10 mA
IC =500 mA
IB =50 mA
0.3
0.7
V
V
VBE(s at)
∗ Collector-Base
Saturat ion Voltage
IC =100 mA
IB =10 mA
IC =500 mA
IB =50 mA
1.25
2
V
V
hFE
DC Current G ain
IC =0.1 mA
VCE =10 V
for grou p F
for grou p G
for grou p H
IC =10 mA
VCE =1 V
for grou p F
for grou p G
for grou p H
IC =100 mA
VCE =1 V
for grou p F
for grou p G
for grou p H
IC =500 mA
VCE =2 V
for grou p F
for grou p G
for grou p H
35
50
80
75
110
180
100
160
250
35
60
100
250
400
630
fT
Transit ion F requency
IC =20 mA VCE = 10V f = 100MHz
100
MHz
CCB
Collect or Base
Capacitance
IE =0
VCB = 10 V
f = 1 MHz
12
pF
CEB
Emitt er Base
Capacitance
IC =0
VCE =0.5 V
f =1 MHz
80
pF
NF
Noise Figure
VCE =5 V
IC =0.2 mA
f = 1KHz
∆f = 200 Hz RG =2 KΩ
210
dB
ton
Switching On Time
IC =150 mA
IB1 =-IB2 =15 mA
RL =150
100
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
BCW66
2/4


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