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BCW30 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BCW30
Description  SMALL SIGNAL PNP TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BCW30 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj- amb
• Thermal Resistance Junction-Ambient
Max
420
oC/W
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICBO
Collect or Cut-off
Current (IE =0)
VCB =-30 V
VCB =-30 V
Tj =100
oC
-100
-10
nA
µA
V(BR)CES
∗ Collector-Emitter
Breakdown Volt age
(VBE =0)
IC =-10
µA-32
V
V( BR)CEO
∗ Collector-Emitter
Breakdown Volt age
(IB =0)
IC =-2 mA
-32
V
V( BR)CBO
∗ Collector-Base
Breakdown Volt age
(IB =0)
IC =-10
µA-32
V
V(BR)EBO
Emitt er-Base
Breakdown Volt age
(IC =0)
IC =-10
µA-5
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =-10 mA
IB =-0.5 mA
IC =-50 mA
IB = -2.5 mA
-0.18
-0.3
V
V
VBE(s at)
∗ Collector-Base
Saturat ion Voltage
IC =-10 mA
IB =-0.5 mA
IC =-50 mA
IB =-2.5 mA
-0.72
-0.81
V
V
VBE(on)
∗ Base-Emitter On
Voltage
IC =-2 mA
VCE = -5 V
-0.6
-0.75
V
hFE
DC Current G ain
IC =-10
µAVCE =-5 V
IC =-2 mA
VCE = -5 V
215
150
500
fT
Transit ion F requency
IC =-10 mA VCE = -5 V f = 100 MHz
150
MHz
CCB
Collect or Base
Capacitance
IE =0
VCB =-10 V
f = 1MHz
7
dB
NF
Noise Figure
IC =-0.2mA
VCE =-5 V
f = 1KHz
∆f = 200 Hz Rg =2KΩ
10
dB
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
BCW30
2/4


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