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BC847 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. BC847
Description  SMALL SIGNAL NPN TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BC847 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-amb
Rth j-SR
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Substrat e
Max
420
330
oC/W
oC/W
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICBO
Collect or Cut-off
Current (IE =0)
VCE =30 V
VCE =30 V
Tamb =150
oC
15
5
nA
µA
V(BR)CES
∗ Collector-Emitter
Breakdown Volt age
(VBE =0)
IC =10
µA50
V
V(BR)CBO
∗ Collector-Base
Breakdown Volt age
(IE =0)
IC =10
µA50
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Volt age
(IB =0)
IC =2 mA
45
V
V(BR)EBO
Emitt er-Base
Breakdown Volt age
(IC =0)
IC =10
µA6
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =10 mA
IB =0.5 mA
IC =100 mA
IB =5 mA
0. 09
0.2
0.25
0.6
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =10 mA
IB =0.5 mA
IC =100 mA
IB =5 mA
0. 75
0.9
V
V
VBE(on)
∗ Base-Emitter On
Voltage
IC =2 mA
VCE =5 V
IC =10 mA
VCE =5 V
0.58
0. 63
0.7
0.7
0.77
V
V
hFE
DC Current G ain
IC =10
µAVCE =5 V
IC =2 mA
VCE = 5 V
200
150
290
450
fT
Transit ion F requency
IC =10 mA VCE = 5 V f = 100MHz
300
MHz
CCB
Collect or Base
Capacitance
IE =0
VCB =10 V
f = 1 MHz
4.5
pF
CEB
Collector Emitter
Capacitance
IC =0
VEB =0.5 V
f =1 MHz
9
pF
NF
Noise Figure
VCE =5 V
IC =0.2 mA
f = 1KHz
∆f = 200 Hz RG =2 KΩ
210
dB
hie
Input Impedance
VCE =5 V
IC = 2 mA
f = 1KHz
3. 2
4.5
8.5
K
hre
Reverse Voltage Ratio
VCE =5 V
IC =2 mA
f = 1KHz
2
10
-4
hfe
Small Signal Current
Gain
VCE =5 V
IC = 2 mA
f = 1KHz
330
hoe
Output Admittance
VCE =5 V
IC = 2 mA
f = 1KHz
30
60
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
BC847
2/4


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