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BAS70J Datasheet(PDF) 3 Page - STMicroelectronics

Part No. BAS70J
Description  SMALL SIGNAL SCHOTTKY DIODE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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BAS70J / BAS70W / BAS70-04W /
BAS70-05W / BAS70-06W
3/5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100
°C
Typical values
Tj=25
°C
Maximum values
Tj=25
°C
Typical values
Fig. 1: Forward voltage drop versus forward
current.
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(
µA)
Tj=25
°C
Tj=100
°C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(
°C)
IR(
µA)
VR=70V
Fig. 3: Reverse leakage current versus junction
temperature (typical values).
1
10
100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25
°C
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
T
δ=tp/T
tp
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4
with
recommended
pad
layout,
S(Cu)=35
µm).
0
5
10
15
20
25
30
35
40
45
50
300
350
400
450
500
550
600
S(Cu) (mm )
Rth(j-a) (
°C/W)
P=0.2W
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35
µm).




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