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AVS08 Datasheet(PDF) 3 Page - STMicroelectronics |
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AVS08 Datasheet(HTML) 3 Page - STMicroelectronics |
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* For either polarity of electrode A2 voltage with reference to electrode A1. DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS08CB / AVS08CBI Symbol Parameter Value Unit Min. Max. VTM *ITM =7A tp = 10ms Tj =25 °C 1.65 V IDRM *VDRM rated Gate open Tj =25 °C10 µA Fig. 1 :Maximum RMS power dissipation versus RMS on-state current (F = 60Hz). (Curves are cut off by (dI/dt)c limitation) THERMAL RESISTANCES TRIAC AVS08CB / AVS08CBI Symbol Parameter Value Unit Rth (j-a) Junction-to-ambient 60 °C/W Rth (j-c) DC Junction-to-case for DC AVS08CB 5.4 °C/W AVS08CBI 6.3 Rth (j-c) AC Junction-to-case for 360 ° conduction angle ( F = 50Hz) AVS08CB 4.0 °C/W AVS08CBI 4.7 AVS08 3/7 |
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