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RM20TN-H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # RM20TN-H
Description  Three-Phase Diode Bridge
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RM20TN-H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Sep.1998
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
RM20TN-H
Units
Repetitive Peak Reverse Voltage
VRRM
800
Volts
Non-Repetitive Peak Reverse Voltage
VRSM
840
Volts
Recommended AC Input Voltage
EA
220
Volts
DC Output Current (Tb = 100°C)
IO
24
Amperes
Surge (Non-Repetitive) Forward Current (One Half Cycle at 60Hz, Peak Value)
IFSM
255
Amperes
I2t for Fusing (Value for One Cycle of Surge Current)
I2t
270
A2sec
Junction Temperature
Tj
-40 ~ +125
°C
Storage Temperature
Tstg
-40 ~ +125
°C
Operating Frequency
f
1000
Hz
Maximum Mounting Torque M3.5 Mounting Screw
0.78 ~ 0.98
N · m
Maximum Mounting Torque M3.5 Terminal Screw
0.78 ~ 0.98
N · m
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Repetitive Reverse Current
IRRM
Tj = 125°C, VRRM = Rated
8.0
mA
Forward Voltage Drop
VFM
Tj = 25°C, IFM = 20A,
1.5
Volts
Instantaneous Meaurement
Thermal Resistance
Rth(j-b)
Junction to Base Plate
-
2.0
°C/ W
Thermal Resistance
Rth(b-f)
Base to Fin, Thermal Grease Applied
0.3
°C/W
Isolation Resistance
At 500V DC
10
M
Between Terminal and Base Plate
RM20TN-H
DC OUTPUT CURRENT, I
o, (AMPERES)
ALLOWABLE DC OUTPUT CURRENT
VS. BASE PLATE TEMPERATURE
120
100
80
60
40
20
08
16
0
24
32


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