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BSM150GB120DLC Datasheet(PDF) 2 Page - eupec GmbH |
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BSM150GB120DLC Datasheet(HTML) 2 Page - eupec GmbH |
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2 / 8 page  Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GB120DLC vorläufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) IC = 150A, VCE = 600V turn on delay time (inductive load) VGE = ±15V, RG = 5,6Ω, Tvj = 25°C td,on - 0,05 - µs VGE = ±15V, RG = 5,6Ω, Tvj = 125°C - 0,06 - µs Anstiegszeit (induktive Last) IC = 150A, VCE = 600V rise time (inductive load) VGE = ±15V, RG = 5,6Ω, Tvj = 25°C tr - 0,05 - µs VGE = ±15V, RG = 5,6Ω, Tvj = 125°C - 0,07 - µs Abschaltverzögerungszeit (ind. Last) IC = 150A, VCE = 600V turn off delay time (inductive load) VGE = ±15V, RG = 5,6Ω, Tvj = 25°C td,off - 0,57 - µs VGE = ±15V, RG = 5,6Ω, Tvj = 125°C - 0,57 - µs Fallzeit (induktive Last) IC = 150A, VCE = 600V fall time (inductive load) VGE = ±15V, RG = 5,6Ω, Tvj = 25°C tf - 0,04 - µs VGE = ±15V, RG = 5,6Ω, Tvj = 125°C - 0,05 - µs Einschaltverlustenergie pro Puls IC = 150A, VCE = 600V, VGE = 15V turn-on energy loss per pulse RG = 5,6Ω, Tvj = 125°C, LS = 60nH Eon - 17 - mWs Abschaltverlustenergie pro Puls IC = 150A, VCE = 600V, VGE = 15V turn-off energy loss per pulse RG = 5,6Ω, Tvj = 125°C, LS = 60nH Eoff - 18 - mWs Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 5,6Ω SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 950 - A Modulinduktivität stray inductance module LsCE - 25 - nH Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 0,6 - m Ω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung IF = 150A, VGE = 0V, Tvj = 25°C VF - 1,8 2,3 V forward voltage IF = 150A, VGE = 0V, Tvj = 125°C - 1,7 V Rückstromspitze IF = 150A, - diF/dt = 3100A/µsec peak reverse recovery current VR = 600V, VGE = -15V, T vj = 25°C IRM - 180 - A VR = 600V, VGE = -15V, T vj = 125°C - 220 - A Sperrverzögerungsladung IF = 150A, - diF/dt = 3100A/µsec recovered charge VR = 600V, VGE = -15V, T vj = 25°C Qr - 17 - µAs VR = 600V, VGE = -15V, T vj = 125°C - 32 - µAs Abschaltenergie pro Puls IF = 150A, - diF/dt = 3100A/µsec reverse recovery energy VR = 600V, VGE = -15V, T vj = 25°C Erec - 4 - mWs VR = 600V, VGE = -15V, T vj = 125°C - 10 - mWs 2(8) DB_BSM150GB120DLC.xls |
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