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74VHC132T Datasheet(PDF) 3 Page - STMicroelectronics |
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74VHC132T Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 7 page  CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Val ue Un it TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. CIN Input Capacitance 4 10 10 pF CPD Power Dissipation Capacitance (note 1) 16 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN +ICC/4 (per Gate) AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns) Symb ol Parameter Test Co nditi on Val ue Un it VCC (V) CL (pF ) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. tPLH tPHL Propagation Delay Time 3.3 (*) 15 7.6 11.9 1.0 14.0 ns 3.3 (*) 50 10.1 15.4 1.0 17.5 5.0 (**) 15 4.9 7.7 1.0 9.0 5.0 (**) 50 6.4 9.7 1.0 11.0 (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5V ± 0.5V DC SPECIFICATIONS Symb ol Parameter T est Cond ition s Val ue Un it VCC (V) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. Vt+ High Level Threshold Voltage 3.0 2.2 2.2 V 4.5 3.15 3.15 5.5 3.85 3.85 Vt- Low Level Threshold Voltage 3.0 0.9 0.9 V 4.5 1.35 1.35 5.5 1.65 1.65 Vh Hysteresis Voltage 3.0 0.3 1.2 0.3 1.2 V 4.5 0.4 1.4 0.4 1.4 5.5 0.5 1.6 0.5 1.6 VOH High Level Output Voltage 2.0 IO=-50 µA 1.9 2.0 1.9 V 3.0 IO=-50 µA 2.9 3.0 2.9 4.5 IO=-50 µA 4.4 4.5 4.4 3.0 IO=-4 mA 2.58 2.48 4.5 IO=-8 mA 3.94 3.8 VOL Low Level Output Voltage 2.0 IO=50 µA 0.0 0.1 0.1 V 3.0 IO=50 µA 0.0 0.1 0.1 4.5 IO=50 µA 0.0 0.1 0.1 3.0 IO=4 mA 0.36 0.44 4.5 IO=8 mA 0.36 0.44 II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current 5.5 VI =VCC or GND 2 20 µA 74VHC132 3/7 |
Similar Part No. - 74VHC132T |
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Similar Description - 74VHC132T |
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