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2SK2641-01 Datasheet(PDF) 3 Page - Fuji Electric

Part # 2SK2641-01
Description  N-CHANNEL SILICON POWER MOSFET
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2641-01 Datasheet(HTML) 3 Page - Fuji Electric

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3
2SK2641-01
FUJI POWER MOSFET
-50
0
50
100
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
max.
typ.
Drain-source on-state resistance
Tch [
oC]
-50
0
50
100
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
Tch [
oC]
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
350
400
Vcc=100V
250V
400V
100V
250V
Vcc=400V
Typical gate charge characteristic
Qg [nC]
0
5
10
15
20
25
30
35
40
10
-2
10
-1
10
0
10
1
10
2
10p
100p
1n
10n
Crss
Coss
Ciss
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
VDS [V]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-2
10
-1
10
0
10
1
Tch=25
o
C typ.
Forward characteristic of reverse of diode
VSD [V]
0
50
100
150
0
50
100
150
200
250
Avalanche energy derating
Starting Tch [
o
C]
RDS(on)=f(Tch):ID=5A,VGS=10V
VGS=f(Qg):ID=10A,Tch=25°C
IF=f(VSD):80µs Pulse test,VGS=0V
Eas=f(starting Tch):Vcc=50V,IAV=10A


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