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STTH60R04W Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH60R04W Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 7 page Characteristics STTH60R04 4/7 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dIF/dt (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 I RM Q RR I F=60A V R=320V Tj(°C) Q [T ]/Q [T = 125° C] and I RR j RR j RM j RM j [T ]/I [T = 125° C] V Fp(V) 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 I F= 60A T j=125°C dIF/dt(A/µs) Figure 9. Forward recovery time versus dIF/dt (typical values) Figure 10. Junction capacitance versus reverse voltage applied (typical values) t FR(ns) 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 I F=60A V FR=1.1 x VF max. T j=125°C dIF/dt(A/µs) C(pF) 100 1000 1 10 100 1000 F=1MHz V OSC=30mVRMS T j=25°C VR(V) |
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