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STSJ80N4LLF3 Datasheet(PDF) 3 Page - STMicroelectronics |
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STSJ80N4LLF3 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STSJ80N4LLF3 Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate- source voltage ± 16 V VGS (1) 1. Guaranteed for test time < 15ms Gate- source voltage ±18 V ID (2) 2. This value is rated according to Rthj-c Drain current (continuous) at TC = 25°C 80 A ID (3) 3. This value is rated according to Rthj-pcb Drain current (continuous) at TC = 25°C 18 A ID (2) Drain current (continuous) at TC = 100°C 50 A IDM (4) 4. Pulse with limited by safe operating area Drain current (pulsed) 72 A Ptot (2) Total dissipation at TC = 25°C 70 W Ptot (3) Total dissipation at TC = 25°C 3 W Tj Tstg Maximum operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-c Thermal resistance junction-case max 1.8 °C/W Rthj-pcb (1) 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.) Thermal resistance junction-pcb max 42 °C/W |
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