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TSM55N03 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM55N03 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM55N03 25V N-Channel MOSFET 1/6 Version: A07 TO-252 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Part No. Package Packing TSM55N03CP RO TO-252 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS @4.5V. ID 55 A Pulsed Drain Current, VGS @4.5V IDM 150 A Continuous Source Current (Diode Conduction) a,b IS 20 A Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) EAS 300 mJ Ta = 25 oC 65 Maximum Power Dissipation Ta = 70 oC PD 42 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 10 S Junction to Case Thermal Resistance RӨJC 1.8 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 40 oC/W Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 6 @ VGS = 10V 30 25 9 @ VGS = 4.5V 30 Pin Definition: 1. Gate 2. Drain 3. Source Block Diagram N-Channel MOSFET |
Similar Part No. - TSM55N03_07 |
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Similar Description - TSM55N03_07 |
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