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IRL3202PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRL3202PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 48 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 30 A IDM Pulsed Drain Current 190 PD @TC = 25°C Power Dissipation 69W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy 270 mJ IAR Avalanche Current 29A EAR Repetitive Avalanche Energy 6.9mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) 7/30/04 IRL3202PbF HEXFET® Power MOSFET PD -95659 These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. S D G Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case 1.8 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance VDSS = 20V RDS(on) = 0.016Ω ID = 48A TO-220AB Description l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free www.irf.com 1 |
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