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2N5886 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N5886
Description  COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2N5886 Datasheet(HTML) 2 Page - STMicroelectronics

  2N5886 Datasheet HTML 1Page - STMicroelectronics 2N5886 Datasheet HTML 2Page - STMicroelectronics 2N5886 Datasheet HTML 3Page - STMicroelectronics 2N5886 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.875
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO
Tc = 150
o C
1
10
mA
mA
ICBO
Collector Cut-off
Current (IE = 0)
VCE = rated VCBO
1mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 40 V
2
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 200 mA
80
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 15 A
IB = 1.5 A
IC = 25 A
IB = 6.25 A
1
4
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 25 A
IB = 6.25 A
2.5
V
VBE
Base-Emitter Voltage
IC = 10 A
VCE = 4 V
1.5
V
hFE
DC Current Gain
IC = 3 A
VCE = 4 V
IC = 10 A
VCE = 4 V
IC = 25 A
VCE = 4 V
35
20
4
100
hfe
Small Signal Current
Gain
IC = 3 A
VCE = 4 V
f = 1KHz
20
fT
Transition frequency
IC = 1 A
VCE = 10 V
f =1 MHz
4
MHz
CCBO
Collector Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
for NPN type
for PNP type
500
1000
pF
pF
tr
Rise Time
IC = 10 A
VCC = 30 V
IB1 = -IB2 = 1A
0.7
µs
ts
Storage Time
1
µs
tf
Fall Time
0.8
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2N5884 / 2N5886
2/4


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