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RM100D2Z-40 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RM100D2Z-40
Description  HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RM100D2Z-40 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
40
2000
2100
1600
Symbol
VRRM
VRSM
VR (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
Unit
A
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180
° conduction, TC=87°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
155
100
2000
1.7
× 104
1000
–40~+125
–40~+125
3000
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IF (RMS)
IF (AV)
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
mA
V
°C/W
°C/W
M
Limits
Symbol
IRRM
VFM
Rth (j-c)
Rth (c-f)
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125
°C, VRRM applied
Tj=25
°C, IFM=320A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
10
Typ.
Max.
15
1.35
0.3
0.2
ELECTRICAL CHARACTERISTICS
MITSUBISHI DIODE MODULES
RM100D2Z-40
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE


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